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Building tomorrow’s memory today. High capacity, high bandwidth, low power — engineered for the memory-centric era of artificial intelligence and high-performance computing.
Founded in 2016 by Dr. Eli Harari, SunRise Memory is pioneering the next generation of memory technology to meet the explosive demands of AI, LLMs, and high-performance computing.
In 2016, Eli Harari — founder and former CEO of SanDisk — foresaw the inevitable scaling limitations of DRAM in the face of memory-hungry AI applications. He founded SunRise Memory to develop a revolutionary alternative.
Today, our team of 40 engineers in the USA and Israel is developing the first 3D ferroelectric RAM: a high-capacity, high-bandwidth, low-power system solution designed from the ground up for manufacturability in existing 3D NAND fabs.
By 2026 and beyond, we aim to deliver 10X higher bit density than DRAM, with revolutionary system architecture enabling hundreds of parallel memory banks per chip — accelerating the shift to a memory-centric computing era.
Chairman & CEO
Founder of SanDisk, National Medal of Technology recipient, and member of the National Academy of Engineering. PhD in Solid State Sciences from Princeton.
CFO
Former SVP of Business Development at SanDisk. Expertise in M&A, finance, IP, and strategic initiatives. Former SEC staff member and corporate lawyer.
VP, Process & Device Technology
20+ years in semiconductor tech. Former leadership roles at Nova and Applied Materials. Holds 28+ patents. M.Eng from Cornell.
VP, System Engineering
18+ years at Intel in ASIC design and HPC platforms. Expert in bridging architecture and execution for complex technologies.
Head of Memory Design
25+ years in non-volatile memory design. Former Director at SanDisk and Western Digital. Expertise in Flash, ReRAM, and emerging memories.
CTO (Implied)
Deep expertise in semiconductor architecture and system integration. Former executive at leading memory and AI infrastructure firms.
SunRise Memory is developing a new class of 3D ferroelectric RAM designed for AI, HPC, and data centers. Our technology delivers unprecedented density, bandwidth, and energy efficiency.
High-Density 3D Ferroelectric RAM
Mid-Range AI Memory Module
Edge AI & Embedded Memory
Memory-Centric AI Platform
Ferroelectric Memory Cell
Memory Management ASIC
Vertical Integration Platform
Low-Power Memory Subsystem
Our 3D ferroelectric RAM technology is engineered to overcome the limitations of traditional DRAM and enable the next wave of AI innovation.
3D skyscraper scaling enables dramatically higher bit density than DRAM.
Hundreds of parallel memory banks deliver unmatched data throughput.
Ferroelectric cells operate at low voltage, reducing energy consumption.
A fountain of innovation with foundational IP in 3D ferroelectric memory.
It’s a next-generation memory technology using ferroelectric materials in a 3D stacked architecture to achieve high density, low power, and high bandwidth — ideal for AI workloads.
Our technology aims for 10X higher density, significantly lower power consumption, and higher bandwidth through parallel bank architecture.
We are targeting commercial availability by 2026, with prototypes and partnerships underway.
Yes — our design is compatible with existing 3D NAND high-volume manufacturing processes.
Founded by Eli Harari (SanDisk), our team includes veterans from Intel, SanDisk, Applied Materials, and leading semiconductor labs.
We are always happy to hear from entrepreneurs and potential partners interested in our technology.
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