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3D Ferroelectric RAM for AI

Building tomorrow’s memory today. High capacity, high bandwidth, low power — engineered for the memory-centric era of artificial intelligence and high-performance computing.

About SunRise Memory

Founded in 2016 by Dr. Eli Harari, SunRise Memory is pioneering the next generation of memory technology to meet the explosive demands of AI, LLMs, and high-performance computing.

Our Vision

In 2016, Eli Harari — founder and former CEO of SanDisk — foresaw the inevitable scaling limitations of DRAM in the face of memory-hungry AI applications. He founded SunRise Memory to develop a revolutionary alternative.

Today, our team of 40 engineers in the USA and Israel is developing the first 3D ferroelectric RAM: a high-capacity, high-bandwidth, low-power system solution designed from the ground up for manufacturability in existing 3D NAND fabs.

By 2026 and beyond, we aim to deliver 10X higher bit density than DRAM, with revolutionary system architecture enabling hundreds of parallel memory banks per chip — accelerating the shift to a memory-centric computing era.

SunRise Memory Technology

Executive Leadership

Eli Harari

Eli Harari

Chairman & CEO

Founder of SanDisk, National Medal of Technology recipient, and member of the National Academy of Engineering. PhD in Solid State Sciences from Princeton.

Richard Chernicoff

Richard Chernicoff

CFO

Former SVP of Business Development at SanDisk. Expertise in M&A, finance, IP, and strategic initiatives. Former SEC staff member and corporate lawyer.

Kavita Shah

Kavita Shah

VP, Process & Device Technology

20+ years in semiconductor tech. Former leadership roles at Nova and Applied Materials. Holds 28+ patents. M.Eng from Cornell.

Sagie Goldenberg

Sagie Goldenberg

VP, System Engineering

18+ years at Intel in ASIC design and HPC platforms. Expert in bridging architecture and execution for complex technologies.

Tz-Yi Liu

Tz-Yi Liu

Head of Memory Design

25+ years in non-volatile memory design. Former Director at SanDisk and Western Digital. Expertise in Flash, ReRAM, and emerging memories.

Aran Ziv

Aran Ziv

CTO (Implied)

Deep expertise in semiconductor architecture and system integration. Former executive at leading memory and AI infrastructure firms.

Our Products & Innovations

SunRise Memory is developing a new class of 3D ferroelectric RAM designed for AI, HPC, and data centers. Our technology delivers unprecedented density, bandwidth, and energy efficiency.

SR-FRAM 1024

High-Density 3D Ferroelectric RAM

  • • 1TB capacity per module
  • • 10X density vs. DRAM
  • • 3D stacked architecture
  • • Compatible with 3D NAND fabs
In Development

SR-FRAM 512

Mid-Range AI Memory Module

  • • 512GB capacity
  • • Ultra-low voltage operation
  • • 800 GB/s bandwidth
  • • Ideal for LLM inference
Prototype Stage

SR-FRAM 256

Edge AI & Embedded Memory

  • • 256GB capacity
  • • Sub-1V operation
  • • Low power consumption
  • • For robotics and IoT
Design Phase

SR-System 1

Memory-Centric AI Platform

  • • 4x SR-FRAM modules
  • • 4TB total capacity
  • • Parallel bank architecture
  • • For data center deployment
Concept

SR-Cell FE

Ferroelectric Memory Cell

  • • Single-bit ferroelectric cell
  • • Scalable to 5nm and below
  • • Non-volatile operation
  • • Low write energy
Patented

SR-Controller X1

Memory Management ASIC

  • • Manages 256 memory banks
  • • Parallel data access
  • • Low-latency scheduling
  • • Co-designed with SR-FRAM
In Design

SR-Stack 3D

Vertical Integration Platform

  • • 128-layer stacking
  • • TSV-based interconnects
  • • Thermal management design
  • • For high-volume production
R&D

SR-Energy Core

Low-Power Memory Subsystem

  • • 70% lower power vs. DRAM
  • • Dynamic voltage scaling
  • • For green data centers
  • • AI-driven power optimization
Development

Why SunRise Memory?

Our 3D ferroelectric RAM technology is engineered to overcome the limitations of traditional DRAM and enable the next wave of AI innovation.

10X Density

3D skyscraper scaling enables dramatically higher bit density than DRAM.

High Bandwidth

Hundreds of parallel memory banks deliver unmatched data throughput.

Low Power

Ferroelectric cells operate at low voltage, reducing energy consumption.

150+ Patents

A fountain of innovation with foundational IP in 3D ferroelectric memory.

10X
Higher Density vs DRAM
40+
Engineers in USA & Israel
150+
Patents Filed
$200B
DRAM Market by 2030

Frequently Asked Questions

What is 3D Ferroelectric RAM?

It’s a next-generation memory technology using ferroelectric materials in a 3D stacked architecture to achieve high density, low power, and high bandwidth — ideal for AI workloads.

How does it compare to DRAM?

Our technology aims for 10X higher density, significantly lower power consumption, and higher bandwidth through parallel bank architecture.

When will the product be available?

We are targeting commercial availability by 2026, with prototypes and partnerships underway.

Can it be manufactured in existing fabs?

Yes — our design is compatible with existing 3D NAND high-volume manufacturing processes.

Who is behind SunRise Memory?

Founded by Eli Harari (SanDisk), our team includes veterans from Intel, SanDisk, Applied Materials, and leading semiconductor labs.

Get in Touch

We are always happy to hear from entrepreneurs and potential partners interested in our technology.

Email: [email protected]

Address: 225 Charcot Ave, San Jose, CA 95131

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